Boron carbide/n-silicon carbide heterojunction diodes

Shock-wave strength properties of boron carbide and silicon carbide

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

Sintering of Ceramics

Sintering with low frequency rf power (-50 M H z ) is a new technique with unique capabilities that has been used to sinter a variety of ceramic materials, including zirconia-toughened alumina, alumina, silicon carbide, and boron carbide. Processing with low frequencies offers many advantages compared to processing with conventional microwave frequencies (915 MHz and 2.45 GHz). Because of the l...

The incorporation of Nickel and Phosphorus dopants into Boron-Carbon alloy thin films

The structural and electronic properties of nickeland phosphorus-doped boron–carbon (B5C) alloy thin films grown by plasma-enhanced chemical vapor deposition have been examined. The Ni-doped boron–carbon alloys were grown using closo-1,2-dicarbadodecaborane (C2B10H12) as the boron–carbon source compound and nickelocene (Ni(C5H5)2) as the nickel source. The phosphorus-doped alloys were grown usi...

Specific heat of aluminium-doped superconducting silicon carbide

The discoveries of superconductivity in heavily boron-doped diamond, silicon and silicon carbide renewed the interest in the ground states of charge-carrier doped wide-gap semiconductors. Recently, aluminium doping in silicon carbide successfully yielded a metallic phase from which at high aluminium concentrations superconductivity emerges. Here, we present a specific-heat study on superconduct...